DMN2005UFG-13
- Manufacturer
- Diodes Incorporated
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 20V 18.1A PWRDI3333
- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 18.1A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 164 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6495 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.05W (Ta)
- Rds On (Max) @ Id, Vgs :
- 4.6mOhm @ 13.5A, 4.5V
- Supplier Device Package :
- PowerDI3333-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
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| Qty | Unit Price | price |
|---|---|---|
| 1 | 0 | 0 |
| 10 | 0 | 0 |
| 100 | 0 | 0 |
| 1000 | 0 | 0 |
| 10000 | 0 | 0 |
- Stock:
- 10,893
- Minimum Order:
- 1
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