RN2132MFV,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Product Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Description
- TRANS PREBIAS PNP 50V 0.1A VESM
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 5V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-723
- Part Status :
- Active
- Power - Max :
- 150 mW
- Resistor - Base (R1) :
- 200 kOhms
- Resistor - Emitter Base (R2) :
- -
- Supplier Device Package :
- VESM
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
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- Stock:
- 15,575
- Minimum Order:
- 1
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