MT3S113P(TE12L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Product Category
- Transistors - Bipolar (BJT) - RF
- Description
- RF TRANS NPN 5.3V 7.7GHZ PW-MINI
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 7.7GHz
- Gain :
- 10.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.45dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Part Status :
- Active
- Power - Max :
- 1.6W
- Supplier Device Package :
- PW-MINI
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5.3V
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- Stock:
- 48,811
- Minimum Order:
- 1
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