HN1C03FU-B,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Product Category
Transistors - Bipolar (BJT) - Arrays
Description
NPN + NPN IND. TRANSISTOR VCEO20
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Current - Collector (Ic) (Max) :
300mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
350 @ 4mA, 2V
Frequency - Transition :
30MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-TSSOP, SC-88, SOT-363
Part Status :
Active
Power - Max :
200mW
Supplier Device Package :
US6
Transistor Type :
2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic :
100mV @ 3mA, 30A
Voltage - Collector Emitter Breakdown (Max) :
20V
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International Shipping, on time,   every time.

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All prices are in USD.
Qty Unit Price price
1 0 0
10 0 0
100 0 0
1000 0 0
10000 0 0
Stock:
38,637
Minimum Order:
1

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