Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max：

Transistor Type：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

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4 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1104CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	13,988 In-stock	Get Quote
RN1104ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	49,622 In-stock	Get Quote
RN2104CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	20,725 In-stock	Get Quote
RN2104ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	31,985 In-stock	Get Quote

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