Transistors - Bipolar (BJT) - Single, Pre-Biased - Lingto-Professional global electronic components distribution platform

Power - Max：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Resistor - Emitter Base (R2)：

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4 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1104CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	13,988 In-stock	Get Quote
RN1109CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	18,821 In-stock	Get Quote
RN1104ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	49,622 In-stock	Get Quote
RN1109ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	20,798 In-stock	Get Quote

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