Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

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2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	RN1105CT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	48,564 In-stock	Get Quote
	RN1105ACT(TPL3)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	26,776 In-stock	Get Quote

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