Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max：

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Transistor Type：

Voltage - Collector Emitter Breakdown (Max)：

Vce Saturation (Max) @ Ib, Ic：

Current - Collector Cutoff (Max)：

Frequency - Transition：

Resistor - Emitter Base (R2)：

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6 Records

Part	Manufacturer	Description	MOQ		Stock	Action
RN1417,LF	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	42,569 In-stock	Get Quote
RN1417(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS NP...	1	PDF RFQ	44,868 In-stock	Get Quote
RN2417(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	TRANS PREBIAS PN...	1	PDF RFQ	10,535 In-stock	Get Quote
RN2417,LXHF	Toshiba Electronic Devices and Storage Corporation	AUTO AEC-Q PNP Q1B...	1	PDF RFQ	34,800 In-stock	Get Quote
RN1417,LXHF	Toshiba Electronic Devices and Storage Corporation	AUTO AEC-Q TR NPN...	1	PDF RFQ	45,491 In-stock	Get Quote
DTC114ECAHZGT116	ROHM Semiconductor	NPN 100MA 50V DIGIT...	1	PDF RFQ	32,114 In-stock	Get Quote

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